MOSFET devices have been widely used since 1970s for various electronic signal and power applications. For power switching applications, there exists the requirement for the device to sustain a high operating voltage, e.g. a few hundred volts. This is made possible by placing a thick and lightly doped drift region as an extension of the MOSFET drain emitter to accommodate the field depletion.
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By doing so, the penalty on the device will be having a higher on-state conduction resistance as the MOSFET current conduction is made of majority carrier transport, and the conductivity modulation occurred in the drift region by the majority carriers is normally insufficient.